electricity
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Good for young kids
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ELECTRICITY & ELECTRONICS
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A technician-training level manual
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Review for E&M text (Duffin)
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My Review

Tough to readUse this if you have lots of time, and you can understand abstract and abstruse writing.

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Average reference book.The sample specifications are useful as a commerical grade "sheet" specification, but not full book specification. Please note that the book says that you can write for an electronic copy of the specifications included in the book. Sad to say, the author has passed away since it was written and his firm does not provide the specifications on disk.
If you are looking for a good electrical power reference book - look to Bob Hickey's Electrical Engineers Portable Handbook.

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The book is a survey of a large number of PI defectsThe authors start with a review of the basic definitions and terminology of metastable defects. Some of the concepts in this chapter were discussed too shortly and it would be much more efficient if more details were given in particular to the audience of new comers to the field and for graduate students. Chapters 2 and 3 deal with defects in crystalline semiconductors with particular attention to DX and EL2 centers in III-V compounds. The bulk of these chapters is devoted mainly to PI defects as observed with electrical properties such as photoconductivity, resistivity and Hall mobility. Photoinduced changes in the optical properties of crystalline semiconductors associated with the defects creation are numerous, but they were ignored in these chapters and the topic is actually missing. A detailed review of the properties of photoinduced defects in hydrogenated amorphous silicon and their kinetics is given in chapters 4 and 5. These two chapters are well organized and informative. In chapter 6, a summary of PI defects in other amorphous semiconductors are summarized. In certain cases such as chalcogenide glasses, this summary is too short when compared to the amount of work done on PI defects in these materials. The last chapter summarizes the effect of PI defects in devices. This chapter is well written and provides a reasonable summary of the main effects, although the book is oriented more to the material aspects than to devices.
In summary the book is a survey of a large number of PI defects in semiconductors. The subject matter is generally well-organized, although many topics were mentioned too briefly and some significant information has been ignored. The amount of references is reasonable, however it is far from being complete and the book has an index. In my opinion the book can be invaluable as an introduction for those who are new to the field and for graduate students.

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Photovaltaic by Dr. Messanger from FAU

power electronics